Enhancement of Electrical Properties for N-channel ZnO and GaN JFETs

Abstract

The paper presents the enhancement of electrical properties of n-channel zinc oxide (ZnO) and gallium nitride (GaN), wide bandgap materials for junction field effect transistor (JFET). The JFET model is designed by program simulation using the related theories of the semiconductor physics. Firstly, the related work of the electrical properties such as energy band gap with various temperature, depletion layer width and gate voltage, the relation of junction capacitance and gate voltage, transconductance versus drain voltage, channel mobility with channel thickness and current-voltage characteristics are accomplished for ZnO and GaN materials. Finally, the result diagrams are used to improve the electrical properties of JFETs. This research paper gives the help and reference information for the new researchers in optoelectronic semiconductor field and high power and high frequency communication field.