A Review: Design & Fabrication of Semiconductor Diode Using Phase Change Material (GST) for Nanotechnology Application

Authors

  • Praveen J , Anupama JS , Ankitha CC , Bhavani S , Chaitanya A

Abstract

A PN-intersection is shaped when an n-type material is intertwined with a p-type material
making a semiconductor diode. The diode conducts uneven so it might be utilized for the current restricted
circuit, with its applications like rectifier, over-voltage limiter, for cutting and bracing circuit, as a
demodulator gadget and so on. If both sides of the intersection are made of some sort of material (for
example Silicon), the gadget/intersection is called homo, and in any case, the gadget/intersection is called
hetero-intersection/diode. There are 2 strategies to create a diode/intersection, i.e., doping which is favored
for homo- intersections and testimony which is favored for hetero-intersection. The doping requires modern
machines in that we need to diffuse or embeds some other material into silicon wafers, and afterward it will
give naturally limit to the diode which goes about as an intersection. In this paper, a survey is made on
different Phase Change Material (GST) used to design diode for nono technology applications.

Published

2020-04-30

Issue

Section

Articles