Influence of Quantum Size and Alloy Composition on Eigenvalues and Threshold Energies in Quantum Well Devices

Authors

  • Thu Zar Tun, Win Zaw Hein, Than Htike Aung, Tin Tin Hla

Abstract

The paper presents a study of eigenvalues and threshold energies depending on well width of active layer GaAs with alloy composition or mole fraction (x) of two direct bandgap AlxGa1-xAs barriers. The desirable research is based on physical parameters and theoretical data of GaAs and AlxGa1-xAs semiconductor materials by MATLAB software. The action of quantum particles (an electron and a hole) inside Finite Square Well (FSW) is discussed. This simulation is studied that effect of quantum size by changing mole fraction of AlxGa1-xAs barriers by numerically and graphically. This paper supports much information for further researchers in optoelectronic devices with Quantum Well (QW) structure and it is useful to consider before fabrication. 

Published

2020-11-01

Issue

Section

Articles