Influence of Quantum Size and Alloy Composition on Eigenvalues and Threshold Energies in Quantum Well Devices
Abstract
The paper presents a study of eigenvalues and threshold energies depending on well width of active layer GaAs with alloy composition or mole fraction (x) of two direct bandgap AlxGa1-xAs barriers. The desirable research is based on physical parameters and theoretical data of GaAs and AlxGa1-xAs semiconductor materials by MATLAB software. The action of quantum particles (an electron and a hole) inside Finite Square Well (FSW) is discussed. This simulation is studied that effect of quantum size by changing mole fraction of AlxGa1-xAs barriers by numerically and graphically. This paper supports much information for further researchers in optoelectronic devices with Quantum Well (QW) structure and it is useful to consider before fabrication.