Simulation and optimization of a thin film 3C-SiC solar cell using SCAPS

Abstract

Theoretical investigations of 3C-SiC PIN thin-film solar cell were carried out. The cell structure is based on Al-doped 3C-SiC as the absorber layer, un-doped 3C-SiC as the window layer, and a double n-layers as the buffer. The buffer layers consist of n layer of 3C-SiC and a layer of 3C-SiC doped with Cr. A window layer of SnO₂ material is used as anti-reflecting material. The influence of the carrier density, thickness of the absorber layer, and buffer layer was investigated on the cell performance. The results show that the optimal absorber layer is 3000 nm and that for the buffer layer is 200 nm. In addition to that, controlling the defect density in the absorber layer at 10¹⁴ cm^-3 is essentially for high-efficiency 3C-SiC cell. An optimal photovoltaic property has been achieved with an efficiency of 30.27% (with J_sc = 47.63 mA?cm^-2, V_oc = 0.768 V and FF = 82.74%).

Keywords: Simulation; optimization ; thin film ; solar cell ; materials