Light Emitting Diode Modelling Based on Double Heterojunction Structure with Hybrid II-VI Compound Semiconductor Materials: Computational Approaches


  • Hla Myo Tun, Sandar Tun, Zaw Min Naing


Wide-gap semiconducting materials are extending critical applications in electronics and optoelectronics with the continued advancement of ultraviolet LEDs. Magnesium- zinc sulfide (Mg-ZnS) and zinc oxide (ZnO) are II-VI semiconducting materials with a wide bandgap. Its alloys have been increasingly investigated due to a UV luminescence ranging. This paper explores classifications, modeling, and optimization of LED for II-VI materials. Firstly, the system analyzes the properties, and associated characteristics of the selected materials are examined with the evaluation results. The parameters approve the band-diagram results of the materials, such as doping concentrations, the effective mass of the materials, and so on. Many dissimilar methods represent the LED-based properties on semiconductor materials, such as electrical properties, optical properties, thermal properties, vibrational properties, magnetic properties, and the like. Among them, LED device characteristics are mainly specified in terms of electrical and optical characteristics. They can mainly determine forward biased voltage, current and emission intensity, and LED color emission region.  In the present work, electrical properties based on the current-voltage characteristic curve is established because LED needs a a certain polarity bias voltage and amplitude for current to flow. Measurement of the forward bias current-voltage behavior of the device demonstrated a departure from the Shockley model of a p-n diode. It was observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunneling. As a matter of further investigation in this study, LEDs' optical properties include luminescence lifetime, light output power, and possible emission color. The newly synthesized material as ZnS and ZnO materials are also used to investigate to meet the above properties. This work was implemented in a simulation environment.

Keywords- Light Emitting Diodes, Double Heterojunction Structure, Hybrid II-VI Compound Materials, Semiconductor Devices, Computational Analysis