An Analytical study of the current- voltage (I-V) characteristics and transconductance of a Gold nanoparticle (nc-Au) embedded Floating gate MOS memory

Authors

  • Amrita Banerjee, Garg Chakraborty, Sunipa Roy

Abstract

A Metal-Oxide Semiconductor (MOS) structure with a composite gate dielectric embedded with Gold (Au) nanoparticles and Silicon (Si) nanoparticles separately has been studied in this paper. This work represented a theoretical and comparative analysis of leakage current that is the Direct tunneling current and the field emission or the Fowler-Nordheim (F-N) tunneling currentfor both the nanoparticles. The reduction of the Direct tunneling current of nanoparticle embedded dielectric is due to the trapped charges within the nanoparticles and the lowering of the onset voltage in the F-N tunneling current expressed the high retention capacity or low writing voltage of the MOS memory.Moreover,the transfer characteristics (channel current versus gate voltage) of the nanoparticles embedded MOS transistor has been studied well in this paper.The change of transconductance with the gate voltagehas been achievedfrom the transfer characteristics. This transfer characteristics of Au nanoparticles investigated in this work has been experimentally established with the other type of nanoparticles reported so far.                         

Keyword: Floating gate, Nanoparticles, Fowler-Nordheim tunneling, Transconductance

Published

2020-12-31

Issue

Section

Articles