Mobility Fluctuation In Single Injection Solid State Diode With Distributed Deep Traps

Abstract

The magnitude of current flow in insulator is drastically affected by the presence of distributed trapping states energetically located in the forbidden gap of the insulator. The injected current carriers are captured by the distributed trapping states for a trapping time which reduces the magnitude of the current flow significantly At low lower .The trapping of the free carriers by empty trapping  states in insulator provides few additional transition regimes caused by the physical parameters characterizing the distributed trapping states. These transition regimes are not present in insulator in the insulator  in the absence of trapping state  .The high field mobility relationship is considered for the single injection current flow in insulator. In single crystals, the high field effects are observed at sufficiently high field strengths which give field dependent carrier mobility. The distribution of trapping states inside the insulator is observed in different forms of the trapping states in energy. The high field effects in single injection devices are obtained under high field conditions. Which give the fluctuations in the carrier velocity of electrons present in the conduction band of the insulator.