Interaction of Mn impurity atoms with VI group elements in the Si lattice
Abstract
Interaction of Mn atoms with VI group elements (S, Se, Te) in the Si lattice has been studied. Formation of electric neutral molecules having ionic-covalent bounds with Mn atoms and VI group elements which probably lead to formation the new binary elementary cells of Si2BVI++Mn in the Si lattice has been revealed experimentally. It has been defined that in Si<S,Mn>, Si<Se,Mn> and Si<Te,Mn> samples of the intensive complex formation takes place by temperatures T=1100?C, T=820?C and ?=650??, accordingly.