Interaction of Mn impurity atoms with VI group elements in the Si lattice

Authors

  • X.M.Iliev, M.O.Tursunov, S.V.Koveshnikov, N.Narqulov, M.X.Madjitov

Abstract

Interaction of Mn atoms with VI group elements (S, Se, Te) in the Si lattice has been studied. Formation of electric neutral molecules having ionic-covalent bounds with Mn atoms and VI group elements which probably lead to formation the new binary elementary cells of Si2BVI++Mn in the Si lattice has been revealed experimentally. It has been defined that in Si<S,Mn>, Si<Se,Mn> and Si<Te,Mn> samples of the intensive complex formation takes place by temperatures T=1100?C, T=820?C and ?=650??, accordingly.

Published

2020-03-08

Issue

Section

Articles