Synthesis and Characterization of Porous Silicon on photoelectronic and sensor Applications
Abstract
The films of the nanocrystalline porous silicon (PS) are produced with the use of the electro-chemical etching of N -type silicon wafer with current density (15mA.cm-2) and etching time (15 min). Properties were studied of FT-IR spectroscopy, XRD, and atomic force microscopy characteristics (AFM) and sensor properties . Show that the size of the crystallites from via the XRD , nano-scale for the prepared samples Ps and the AFM has confirmed the Chemical fictionalization of the nanometric size throughout the electro-chemical etching exhibit on the PS surface chemical composition. The analyses of the FT-IR have shown that Si bounds dangled for manufactured strat of the porous silicon have large Hydrogen amount for forming weak bonds of Si –H and Si-O-Si, and Si-F. PS characteristics were enhanced through the addition of nickel oxide for increasing the absorbency for utilization in the applications (Hetrojunction photo-electronic). As for the properties of the sensor , it was shown that it has high seneitivity at high temperatures .
