Energy Relaxation of Hot Electrons in AlGaN/AlN/GaN Heterostructures: Effect of 2TA Phonons and Optical Phonon Life Time

Abstract

In this article, we studied theoretically the hot electron energy relaxation in AlGaN/AlN/GaN heterostructures with more importance on the role of two-phonon processes. Without making any assumptions, expression for the electron energy loss rate (ELR) due to electron- two-zone edge transverse acoustic (2TA) phonon and longitudinal optical phonon interaction is derived. Hot-phonon effect has been included for the longitudinal optical phonon scattering. Good agreement is obtained between experimental data and calculation in AlGaN/AlN/GaN heterostructures demonstrates the importance of electron-2TA phonon scattering processes and hot-phonon effect in power loss from hot electrons. Variation of electron energy loss per electron for different optical phonon life time has also been discussed.